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TYPICAL PERFORMANCE CURVES (R)
APT50GN60B APT50GN60BG*
APT50GN60B(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G C E
TO -2 47
* * * *
* 600V Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
8
All Ratings: TC = 25C unless otherwise specified.
APT50GN60B(G) UNIT Volts
600 30
@ TC = 25C
107 64 150 150A @ 600V 366 -55 to 175 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 175C
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 800A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.7 25
2
6.5 1.85
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
A nA
7-2005 050-7612 Rev B
TBD 600 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GN60B(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 50A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT pF V nC
3200 125 100 9.0 325 25 175
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
150 6 20 25 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125
A
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 4.3 7
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.41 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
7-2005 Rev B
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7612
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0
V
GE
= 15V
200 180 160 140 120 100 80 60 40 20 0 11V 15V 13V 12V
APT50GN60B(G)
TJ = 175C
TJ = 125C TJ = 25C
10V 9V 8V 7V
TJ = -55C
160 IC, COLLECTOR CURRENT (A) 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
5 4 3 2 1 0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 50A C T = 25C
J
30 25 20 15 10 5 0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
TJ = -55C TJ = 25C TJ = 125C
VCE = 120V
VCE = 300V
VCE =480V
80 60 40 20 0
TJ = 175C
8 6 4 2 0
0
14 12 10 8 6 4 2 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
50
100 150 200 250 300 350 400 GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.0 2.5
IC = 100A
2.5 2.0 1.5 1.0 0.5
IC = 100A
2.0
IC = 50A IC = 25A
IC = 50A
1.5 1.0 0.5 0
IC = 25A
16 14 12 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 8
1.10
0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
100 125 150 175 75 50 25 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 0
140
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.05
IC, DC COLLECTOR CURRENT(A)
120 100 80 60 40 20 7-2005 050-7612 Rev B
Lead Temperature Limited
1.00
0.95
0.90 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
0 -50 -25
25
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
350
td (OFF), TURN-OFF DELAY TIME (ns)
APT50GN60B(G)
20
300 250 200 150 100 50 VCE = 400V RG = 4.3 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120
TJ = 125C, VGE = 15V RG = 4.3, L = 100H, VCE = 400V
VGE =15V,TJ=125C VGE =15V,TJ=25C
15
10
5 VCE = 400V
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 120 100
tf, FALL TIME (ns) tr, RISE TIME (ns)
RG = 4.3, L = 100H, VCE = 400V
0
TJ = 25C, 125C RG = 4.3 L = 100 H
0
L = 100 H
80 60 40 20
TJ = 25 or 125C,VGE = 15V
100 80 60 40 20 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 0
TJ = 25C, VGE = 15V
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
0
5000 4000 3000 2000 1000
3500 3000 2500 2000 1500 1000 500
= 400V V CE = +15V V GE R = 4.3
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 16000
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
0
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE R = 4.3
G
0
14000 12000 10000 8000 6000 4000 2000 0 0
Eon2,100A
Eon2,100A
5000 4000 3000 2000 1000 0
Eoff,100A
Eoff,100A Eoff,50A Eon2,50A Eoff,25A
7-2005
Eon2,50A Eoff,50A Eoff,25A Eon2,25A
Rev B
Eon2,25A
050-7612
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
5,000 IC, COLLECTOR CURRENT (A) Cies
160 140 120 100 80 60 40 20
APT50GN60B(G)
C, CAPACITANCE ( F)
1,000 500
P
100 50
C0es Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.45 0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 0.5
Note:
D = 0.9 0.7
PDM
0.3 SINGLE PULSE
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
110 FMAX, OPERATING FREQUENCY (kHz)
50
RC MODEL Junction temp. (C) 0.212 Power (watts) 0.198 Case temperature. (C) 0.115 0.00332
F
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3
G
fmax2 = Pdiss =
10 6
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 80 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
050-7612
Rev B
7-2005
APT50GN60B(G)
APT40DQ60
10% td(on)
Gate Voltage TJ = 125C Collector Current
V CC
IC
V CE
tr 5%
90% 5% Collector Voltage
Switching Energy
10%
A D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% tf 10%
TJ = 125C
Collector Voltage
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
7-2005
1.01 (.040) 1.40 (.055)
Rev B
Gate Collector Emitter
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7612
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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